Furqan: Exam mode

Monday, 21 January 2008

Exam mode

Exam is back!!!. I took 5 modules this semester and have 4 exams. The university allocated 3 weeks for exams. However, since my exams finish within 2 weeks, it means i have a week free before the start of the new semester. To all my friends, good luck in your exam.

Below is my exam timetable.

EEE402 Integrated Circuit Technology 21 January 2008 Firth Hall

EEE417 Optical Communication Devices and Systems 24 January 2008 Octagon Centre

EEE408 Motion Control and Servo Drive Systems 30 January 2008 SWFC Exhibition Hall

EEE407 Energy Utilisation 31 January 2008 Philadelphia Centre

8 comments:

lad said...: Gud Luck for ur exam, may Allah make it easy for you.. :); 21 January 2008 at 21:52
Pena Biru said...: thanks shahneel; 21 January 2008 at 22:05
Anonymous said...: hej! mate...all the best to you...may yu have a smooth exam week...; 22 January 2008 at 12:50
Anonymous said...: Good Luck 4 ur exam!!
Berusaha, berdoa dan bertawakal...; 24 January 2008 at 13:56
Pena Biru said...: thanks. 'sahabat' ni sape ye? i think this is not ur first comment in my blog right?; 24 January 2008 at 15:30
Anonymous said...: sahabat awkle...
hehe...
sy hasnita le.. =)
sori, x tlis name..; 26 January 2008 at 09:40
Pena Biru said...: oo, hasnita rupanyer. ingtkn sapela td. hehe; 27 January 2008 at 02:25
Anonymous said...: =); 28 January 2008 at 14:05

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Journal Publications

1. A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney, J. P. R. David, ”Photoluminescence Investigation of High Quality GaAsBi on GaAs”, Appl. Phys. Lett. 98 122107 (2011)

2. A. R. Mohmad, F. Bastiman, C. J. Hunter, J. S. Ng, S. J. Sweeney, J. P. R. David, ”The effect of Bi composition to the optical quality of GaAsBi”, Appl. Phys. Lett. 99 042107 (2011)

3. F. Bastiman, A. R. Mohmad, J. S. Ng, S. J. Sweeney, J. P. R. David, "Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth", J. Cryst. Growth, 338 57 (2012)

4. A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney, J. P. R. David, ”Room temperature photoluminescence enhancement in GaAsBi alloys”, Phys. Stat. Solidi. C 9 259 (2012)

5. A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David, ”Effects of rapid thermal annealing on GaAsBi alloys”, Appl. Phys. Lett. 101 012106 (2012)

6. C. J. Hunter, F. Bastiman, A. R. Mohmad, R. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David, ”Absorption characteristics of GaAsBi/GaAs diodes in the Near-infrared”, IEEE Photon. Technol. Lett. in press (2012)