Research

Research Interests:
  1. Molecular beam epitaxy (MBE) growth 
  2. Material characterisations

Journal Publications:
  1. A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney, J. P. R. David, ”Photoluminescence Investigation of High Quality GaAsBi on GaAs”, Appl. Phys. Lett. 98 122107 (2011)  
  2. A. R. Mohmad, F. Bastiman, C. J. Hunter, J. S. Ng, S. J. Sweeney, J. P. R. David, ”The effect of Bi composition to the optical quality of GaAsBi”, Appl. Phys. Lett. 99 042107 (2011) 
  3. F. Bastiman, A. R. Mohmad, J. S. Ng, S. J. Sweeney, J. P. R. David,” Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth”, J. Cryst. Growth 338 57 (2012)
  4. A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney, J. P. R. David, ”Room temperature photoluminescence enhancement in GaAsBi alloys”, Phys. Stat. Solidi. C 9 259 (2012)
  5. A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David, ”Effects of rapid thermal annealing on GaAsBi alloys”, Appl. Phys. Lett. 101 012106 (2012)
  6. Hunter, C.J., Bastiman, F., Mohmad, A.R., Richards, R., Ng, J.S., Sweeney, S.J., David, J.P.R., "Absorption characteristics of GaAsBi/GaAs diodes in the near-infrared", IEEE Photonics Technology Letters  24  (23)  pp. 2191 (2012)
  7. R. D. Richards, F. Bastiman, C. J. Hunter, D. F. Mendes, A. R. Mohmad, J. S. Roberts., J. P. R. David, "Molecular beam epitaxy growth of GaAsBi using As2 and As4", J. Cryst. Growth 390 120 (2014)
Conference/poster presentations:
  1. A. R. Mohmad, F. Bastiman, J. S. Ng, S. Jin, S. J. Sweeney, J. P. R. David, “Photoluminescence Investigation of Bulk GaAsBi on GaAs”, 1st International Workshop on Bismuth Containing Semiconductors: Theory, Simulation and Experiment, Michigan USA, 14-16th July 2010
  2. F. Bastiman, A.R. Mohmad, J. S. Ng, S. Sweeney, J. P. R. David, “Growth and Characterisation of GaAs1-xBix for Opto-electronic Applications”, 25th Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff UK, 18-20 April 2011.
  3. Z. Batool, A. R. Mohmad, T. J. C. Hosea, N. Hossain, K. Hild, T. Tiedje and S. J.  Sweeney, “Band gap – spin-orbit splitting cross-over observed in  GaBiAs/GaAs layers with high Bismuth concentration”, 25th Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff UK, 18-20 April 2011.
  4. A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney, J. P. R. David, “Composition dependence photoluminescence of GaAs(1-x)Bi(x) alloys on GaAs”, 38th International Symposium on Compound Semiconductors (ISCS), Berlin Germany, 22-26 May 2011.
  5. Z. Batool, K. Hild, T. J. C. Hosea, A. R. Mohmad, T. Tiedje, R. Butkute, V. Pacebutas, A. Krotkus and S. J.  Sweeney, “Optical characterisation of  GaBiAs/GaAs samples for 1.5 µm application”, UK Semiconductor 2011, Sheffield UK, 6-7 July 2011. (Won best poster)
  6. A. R. Mohmad, F. Bastiman, C. J. Hunter, J. S. Ng, S. J. Sweeney, J. P. R. David, “The effect of Bi composition to the optical quality of GaAs(1-x)Bi(x) alloys”, 2nd  International Workshop on Bismuth Containing Semiconductors: Theory, Simulation and Experiment, Surrey UK, 18-20th July 2011.
  7. Z. Batool, K. Hild, T. J. C. Hosea, A. R. Mohmad, X. Lu, T. Tiedje, R. Butkute, V. Pacebutas, A. Krotkus and S. J.  Sweeney, “Resonance of band gap and spin orbit splitting in GaAsBi/GaAs alloys”, 2nd International Workshop on Bismuth Containing Semiconductors: Theory, Simulation and Experiment, Surrey UK, 18-20 July 2011. 
  8. A. R. Mohmad, F. Bastiman, C. J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David, “Effects of rapid thermal annealing on the optical and structural properties of GaAs1-xBix”, Semiconductor and Integrated Opto-Electronics Conference (SIOE) 2012, Cardiff UK, 2 - 4 April 2012.  
  9. C. J. Hunter, F. Bastiman A. R. Mohmad, R. D. Richards, J. S. Ng, S. J. Sweeney, J. P. R. David, “Effects of rapid thermal annealing on the optical and structural properties of GaAs1-xBix”, Semiconductor and Integrated Opto-Electronics Conference (SIOE) 2012, Cardiff UK, 2 - 4 April 2012  
  10. F. Bastiman, C. J. Hunter, A. R. Mohmad, R. D. Richards, J. S. Ng, S. J. Sweeney, J. P. R. David, “Growth and characterisation of GaAs1-xBix p-i-n diodes”, E-MRS Spring meeting, Strasbourg, 14 - 18 May 2012.

    11.  R. D. Richards, F. Bastiman, C. J. Hunter, A. R. Mohmad, J. S. Ng, J. P. R. David, “Effect of As species on growth of GaAs1-xBix”, UK Semiconductor 2012, Sheffield UK, 4 - 5 July 2012

    12. C. J. Hunter, F. Bastiman A. R. Mohmad, R. D. Richards, J. S. Ng, S. J. Sweeney, J. P. R. David, “Optical and electrical properties of GaAs1-xBix/GaAs diodes”, 3rd International Workshop on Bismuth Containing Semiconductors, Victoria Canada, 15 - 18 July 2012

    13. A. R. Mohmad, F. Bastiman, C. J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David, “The effect of growth parameters on the optical and structural quality of GaAs1-xBix alloys”, 17th International Conference on Molecular Beam Epitaxy, Nara Japan, 23 – 28 September 2012
     
      

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